Preventing strained fin relaxation

US10615278B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Kangguo Cheng · Schenectady, US
• Bruce B. Doris · Brewster, US
• Hong He · Schenectady, US
• Sivananda K. Kanakasabapathy · Niskayuna, US
• Gauri Karve · Cohoes, US
• Juntao Li · Cohoes, US
• Fee Li Lie · Albany, US
• Derrick Liu · Albany, US
• Chun Wing Yeung · Niskayuna, US

Key dates

• Filing date: Oct 27, 2017
• Grant date: Apr 7, 2020
• Expiry date: Oct 27, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/017

Abstract

A semiconductor structure includes a stained fin, a gate upon the strain fin, and a spacer upon a sidewall of the gate and upon an end surface of the strained fin. The end surface of the strained fin is coplanar with a sidewall of the gate. The spacer limits relaxation of the strained fin.