Membrane for EUV lithography
US10908496B2 · kind B2 · utility
1Cited by
1References
20Claims
0Family size
Assignee
Inventors
- Maxim Aleksandrovich Nasalevich
- Erik Achilles Abegg
- Nirupam Banerjee
- Michiel Blauw
- Derk Servatius Gertruda Brouns
- Paul Janssen
- Matthias Kruizinga
- Egbert Lenderink
- Nicolae Maxim
- Andrey Nikipelov
- Arnoud Willem Notenboom
- Claudia Piliego
- Mária Péter
- Gijsbert Rispens
- Nadja Schuh
- Marcus Adrianus Van De Kerkhof
- Willem Joan Van Der Zande
- Pieter-Jan Van Zwol
- Antonius Willem Verburg
- Johannes Petrus Martinus Bernardus Vermeulen
- David Ferdinand Vles
- Willem-Pieter Voorthuijzen
- Aleksandar Nikolov Zdravkov
Key dates
| Filing date | Apr 12, 2017 |
| Grant date | Feb 2, 2021 |
| Priority date | — |
| Expiry date | Sep 7, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70983
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.