Photoresist development with halide chemistries
US12105422B2 · kind B2 · utility
4Cited by
99References
12Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 25, 2020 |
| Grant date | Oct 1, 2024 |
| Priority date | — |
| Expiry date | Feb 11, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0273
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using a halide-containing chemistry such as a hydrogen halide. A metal-containing resist film may be deposited on a semiconductor substrate using a dry or wet deposition technique. The resist film may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film resist. After exposure, the photopatterned metal-containing resist is developed using wet or dry development.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.