Integrated dry processes for patterning radiation photoresist patterning

US12183604B2 · kind B2 · utility

Assignee

• Lam Research Corporation · US

Inventors

• Jengyi Yu · San Ramon, US
• Samantha Tan · Fremont, US
• Mohammed Haroon Alvi · San Jose, US
• Richard Wise · Los Gatos, US
• Yang Pan · Singapore, SG
• Richard A. Gottscho · Pleasanton, US
• Adrien LaVoie · Newberg, US
• Sivananda K. Kanakasabapathy · Niskayuna, US
• Timothy Weidman · Sunnyvale, US
• Qinghuang Lin · Yorktown Heights, US
• Jerome S. Hubacek · Fremont, US

Key dates

• Filing date: Mar 15, 2023
• Grant date: Dec 31, 2024
• Expiry date: Mar 15, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/67207
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.