Magnetic field-enhanced plasma etch reactor
US4842683A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 25, 1988 |
| Grant date | Jun 27, 1989 |
| Priority date | — |
| Expiry date | Apr 25, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32862
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic field enhanced single wafer plasma etch reactor is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting cathode; and a unitary wafer exchange mechanism comprising wafer lift pins which extend through the pedestal and a wafer clamp ring. The lift pins and clamp ring are moved vertically by a one-axis lift mechanism to accept the wafer from a cooperating external robot blade, clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode and a thermal conductivity-enhancing gas parallel-bowed interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device applies the cooling gas to the RF powered electrode without breakdown of the gas. Protective coatings/layers of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.