Method and apparatus of generating PDMAT precursor

US6905541B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Ling Chen · Sunnyvale, US
• Vincent Ku · San Jose, US
• Hua Chung · San Jose, US
• Christophe Marcadal · Sunnyvale, US
• Seshadri Ganguli · Sunnyvale, US
• Jenny Lin · Saratoga, US
• Dien-Yeh Wu · San Jose, US
• Alan Ouye · San Mateo, US
• Mei Chang · San Jose, US

Key dates

• Filing date: May 27, 2003
• Grant date: Jun 14, 2005
• Expiry date: May 27, 2023

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T117/1008
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A precursor and method for filling a feature in a substrate. The method generally includes depositing a barrier layer, the barrier layer being formed from pentakis(dimethylamido)tantalum having less than about 5 ppm of chlorine. The method additionally may include depositing a seed layer over the barrier layer and depositing a conductive layer over the seed layer. The precursor generally includes pentakis(dimethylamido)tantalum having less than about 5 ppm of chlorine. The precursor is generated in a canister having a surrounding heating element configured to reduce formation of impurities.