Method and apparatus for generating a precursor for a semiconductor processing system

US7524374B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Ling Chen · Sunnyvale, US
• Vincent Ku · San Jose, US
• Hua Chung · San Jose, US
• Christophe Marcadal · Sunnyvale, US
• Seshadri Ganguli · Sunnyvale, US
• Jenny Lin · Saratoga, US
• Dien-Yeh Wu · San Jose, US
• Alan Ouye · San Mateo, US
• Mei Chang · San Jose, US

Key dates

• Filing date: May 27, 2004
• Grant date: Apr 28, 2009
• Expiry date: Nov 20, 2024

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T117/1008
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Embodiments of the present invention are directed to an apparatus for generating a precursor for a semiconductor processing system (320). The apparatus includes a canister (300) having a sidewall (402), a top portion and a bottom portion. The canister (300) defines an interior volume (438) having an upper region (418) and a lower region (434). In one embodiment, the apparatus further includes a heater (430) partially surrounding the canister (300). The heater (430) creates a temperature gradient between the upper region (418) and the lower region (434). Also claimed is a method of forming a barrier layer from purified pentakis (dimethylamido) tantalum, for example a tantalum nitride barrier layer by atomic layer deposition.