Chemical precursor ampoule for vapor deposition processes

US7597758B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Ling Chen · Sunnyvale, US
• Vincent Ku · San Jose, US
• Hua Chung · San Jose, US
• Christophe Marcadal · Sunnyvale, US
• Seshadri Ganguli · Sunnyvale, US
• Jenny Lin · Saratoga, US
• Dien-Yeh Wu · San Jose, US
• Alan Ouye · San Mateo, US
• Mei Chang · San Jose, US

Key dates

• Filing date: Aug 31, 2007
• Grant date: Oct 6, 2009
• Expiry date: Nov 5, 2027

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T117/1008
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Embodiments of the invention provide chemical precursor ampoules that may be used during vapor deposition processes. In one embodiment, an apparatus for generating a chemical precursor gas used in a vapor deposition processing system is provided which includes a canister having a sidewall, a top, and a bottom forming an interior volume and a solid precursor material at least partially contained within a lower region of the interior volume. The apparatus further contains an inlet port and an outlet port in fluid communication with the interior volume and an inlet tube connected to the inlet port and positioned to direct a carrier gas towards the sidewall and away form the outlet port. In one example, the solid precursor contains pentakis(dimethylamido) tantalum (PDMAT). In another example, the apparatus contains a plurality of baffles that form an extended mean flow path between the inlet port and the outlet port.