Semiconductor device structure

US7781840B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Ted R. White · Austin, US
• Alexander L. Barr · Austin, US
• Bich-Yen Nguyen · Austin, US
• Marius Orlowski · Meylan, FR
• Mariam Sadaka · Austin, US
• Voon-Yew Thean · Fishkill, US

Key dates

• Filing date: May 1, 2007
• Grant date: Aug 24, 2010
• Expiry date: May 10, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D87/00

Abstract

Two different transistors types are made on different crystal orientations in which both are formed on SOI. A substrate has an underlying semiconductor layer of one of the crystal orientations and an overlying layer of the other crystal orientation. The underlying layer has a portion exposed on which is epitaxially grown an oxygen-doped semiconductor layer that maintains the crystalline structure of the underlying semiconductor layer. A semiconductor layer is then epitaxially grown on the oxygen-doped semiconductor layer. An oxidation step at elevated temperatures causes the oxide-doped region to separate into oxide and semiconductor regions. The oxide region is then used as an insulation layer in an SOI structure and the overlying semiconductor layer that is left is of the same crystal orientation as the underlying semiconductor layer. Transistors of the different types are formed on the different resulting crystal orientations.