Method and apparatus for generating a precursor for a semiconductor processing system

US8062422B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Ling Chen · Sunnyvale, US
• Vincent Ku · San Jose, US
• Hua Chung · San Jose, US
• Christophe Marcadal · Sunnyvale, US
• Seshadri Ganguli · Sunnyvale, US
• Jenny Lin · Saratoga, US
• Dien-Yeh Wu · San Jose, US
• Alan Ouye · San Mateo, US
• Mei Chang · San Jose, US

Key dates

• Filing date: Feb 13, 2009
• Grant date: Nov 22, 2011
• Expiry date: Dec 21, 2029

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T117/1008
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Embodiments described herein are directed to an apparatus for generating a precursor for a semiconductor processing system. In one embodiment, an apparatus for generating a precursor gas during a vapor deposition process is described. The apparatus includes a canister containing an interior volume between a lid and a bottom, a gaseous inlet and a gaseous outlet disposed on the lid, a plurality of silos coupled to the bottom and extending from a lower region to an upper region of the interior volume, and a tantalum precursor having a chlorine concentration of about 5 ppm or less contained within the lower region of the canister.