Substrate support system for reduced autodoping and backside deposition
US8088225B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2009 |
| Grant date | Jan 3, 2012 |
| Priority date | — |
| Expiry date | Dec 18, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67028
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate support system comprises a substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder supports a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. A hollow support member provides support to an underside of, and is configured to convey gas upward into one or more of the passages of, the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment, the gas then flows either outward and upward around the substrate edge (to inhibit backside deposition of reactant gases above the substrate) or downward through passages of the substrate holder, if any, that do not lead back into the hollow support member (to inhibit autodoping by sweeping out-diffused dopant atoms away from the substrate backside).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.