Apparatus and method for substrate clamping in a plasma chamber
US9337072B2 · kind B2 · utility
2Cited by
22References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2010 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Oct 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67253
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.