Changing effective work function using ion implantation during dual work function metal gate integration

US9564505B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Michael P. Chudzik · Beacon, US
• Martin M. Frank · Dobbs Ferry, US
• Herbert L. Ho · New Windsor, US
• Mark J. Hurley · Poughkeepsie, US
• Rashmi Jha · Wyoming, US
• Naim Moumen · Walden, US
• Vijay Narayanan · New York, US
• Dae-Gyu Park · Seojong-myeon, KR
• Vamsi K. Paruchuri · New York, US

Key dates

• Filing date: Apr 17, 2014
• Grant date: Feb 7, 2017
• Expiry date: Apr 17, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/691
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Ion implantation to change an effective work function for dual work function metal gate integration is presented. One method may include forming a high dielectric constant (high-k) layer over a first-type field effect transistor (FET) region and a second-type FET region; forming a metal layer having a first effective work function compatible for a first-type FET over the first-type FET region and the second-type FET region; and changing the first effective work function to a second, different effective work function over the second-type FET region by implanting a species into the metal layer over the second-type FET region.