Dual STI integrated circuit including FDSOI transistors and method for manufacturing the same

US9570465B2 · kind B2 · utility

Assignees

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR
• International Business Machines Corporation · US
• STMICROELECTRONICS, INC. · US

Inventors

• Maud Vinet · Voiron, FR
• Kangguo Cheng · Schenectady, US
• Bruce B. Doris · Brewster, US
• Laurent Grenouillet · Voiron, FR
• Ali Khakifirooz · Los Altos, US
• Yannick Le Tiec · Crolles, FR
• Qing Liu · Guilderland, US

Key dates

• Filing date: Feb 28, 2013
• Grant date: Feb 14, 2017
• Expiry date: Feb 28, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0191
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An integrated circuit, including: a first cell, including: FDSOI transistors; a UTBOX layer lying beneath the transistors; a first well lying beneath the insulator layer and beneath the transistors, the first well having a first type of doping; a first ground plane having a second type of doping, located beneath one of the transistors and between the insulator layer and the first well; a first STI separating the transistors and crossing the insulator layer; a first conductive element forming an electrical connection between the first well and the first ground plane, located under the first STI; a second cell including a second well; a second STI separating the cells, crossing the insulator layer and reaching the bottom of the first and second wells.