PECVD process
US9816187B2 · kind B2 · utility
Assignee
Inventors
- Nagarajan Rajagopalan
- Xinhai Han
- Michael Wenyoung Tsiang
- Masaki Ogata
- Zhijun Jiang
- Juan Carlos Rocha-Alvarez
- Thomas Nowak
- Jianhua Zhou
- Ramprakash Sankarakrishnan
- Amit Kumar BANSAL
- Jeongmin Lee
- Todd Egan
- Edward W. Budiarto
- Dmitriy Panasyuk
- Terrance Y. Lee
- Jian J. Chen
- Mohamad A. Ayoub
- Heung Lak Park
- Patrick Reilly
- Shahid Shaikh
- Bok Hoen Kim
- Sergey Starik
- Ganesh Balasubramanian
Key dates
| Filing date | Sep 28, 2016 |
| Grant date | Nov 14, 2017 |
| Priority date | — |
| Expiry date | Sep 28, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2201/1222
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.