Bai Nie
14Patents
2h-index
48Co-inventors
50Inventor score
Filing activity: Mar 15, 2013 → Mar 29, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9048632B1 | Ultrafast laser apparatus | Electricity | 8 | Active |
| US11521931B2 | Microelectronic structures including bridges | Electricity | 7 | Active |
| US11837534B2 | Substrate with variable height conductive and dielectric elements | Electricity | 1 | Active |
| US11322444B2 | Lithographic cavity formation to enable EMIB bump pitch scaling | Electricity | 1 | Active |
| US12334443B2 | Lithographic cavity formation to enable EMIB bump pitch scaling | Electricity | 0 | Active |
| US11929330B2 | Lithographic cavity formation to enable EMIB bump pitch scaling | Electricity | 0 | Active |
| US12394719B2 | Methods and apparatus to increase glass core thickness | Electricity | 0 | Active |
| US11923312B2 | Patternable die attach materials and processes for patterning | Electricity | 0 | Active |
| US11923307B2 | Microelectronic structures including bridges | Electricity | 0 | Active |
| US12345932B2 | Die last and waveguide last architecture for silicon photonic packaging | Physics | 0 | Active |
| US12354883B2 | Omni directional interconnect with magnetic fillers in mold matrix | Electricity | 0 | Active |
| US12422615B2 | Nested glass packaging architecture for hybrid electrical and optical communication devices | Electricity | 0 | Active |
| US11694898B2 | Hybrid fine line spacing architecture for bump pitch scaling | Electricity | 0 | Active |
| US12354963B2 | Lithographic cavity formation to enable EMIB bump pitch scaling | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.