Taehyun An
11Patents
3h-index
35Co-inventors
52Inventor score
Filing activity: Dec 8, 2014 → Feb 7, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9721957B2 | Static random access memory (SRAM) cells including vertical channel transistors | Electricity | 15 | Active |
| US11195836B2 | Semiconductor memory devices | Electricity | 4 | Active |
| US11410951B2 | Three-dimensional semiconductor memory device | Electricity | 3 | Active |
| US11502084B2 | Three-dimensional semiconductor memory device | Electricity | 2 | Active |
| US9997523B2 | Static random access memory (SRAM) cells including vertical channel transistors and methods of forming the same | Electricity | 1 | Active |
| US11289488B2 | Semiconductor memory device | Electricity | 1 | Active |
| US12052855B2 | Semiconductor memory device | Electricity | 0 | Active |
| US11587929B2 | Semiconductor memory device | Electricity | 0 | Active |
| US11765905B2 | Semiconductor memory device | Electricity | 0 | Active |
| US11398485B2 | Semiconductor memory device | Electricity | 0 | Active |
| US11751378B2 | Semiconductor memory device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.