Programmable Microelectronics Corporation
35Patents
0Active
35Granted
37Portfolio score
Filing activity: Nov 14, 1995 → Aug 17, 2004
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5581504A | Non-volatile electrically erasable memory with PMOS transistor NAND gate structure | Physics | 252 | Expired |
| US5907484A | Charge pump | Electricity | 116 | Expired |
| US5625544A | Charge pump | Electricity | 89 | Expired |
| US5687118A | PMOS memory cell with hot electron injection programming and tunnelling erasing | Electricity | 84 | Expired |
| US5761121A | PMOS single-poly non-volatile memory structure | Electricity | 81 | Expired |
| US6166954A | Single poly non-volatile memory having a PMOS write path and an NMOS read path | Physics | 74 | Expired |
| US5736764A | PMOS flash EEPROM cell with single poly | Electricity | 71 | Expired |
| US5841165A | PMOS flash EEPROM cell with single poly | Electricity | 67 | Expired |
| US5723355A | Method to incorporate non-volatile memory and logic components into a single sub-0.3 micron fabrication process for embedded non-volatile memory | Electricity | 53 | Expired |
| US5912842A | Nonvolatile PMOS two transistor memory cell and array | Electricity | 51 | Expired |
| US5706227A | Double poly split gate PMOS flash memory cell | Electricity | 47 | Expired |
| US5798967A | Sensing scheme for non-volatile memories | Physics | 42 | Expired |
| US5666307A | PMOS flash memory cell capable of multi-level threshold voltage storage | Electricity | 40 | Expired |
| US5691939A | Triple poly PMOS flash memory cell | Electricity | 39 | Expired |
| US5796656A | Row decoder circuit for PMOS non-volatile memory cell which uses electron tunneling for programming and erasing | Physics | 37 | Expired |
| US5966329A | Apparatus and method for programming PMOS memory cells | Physics | 36 | Expired |
| US5909392A | PMOS memory array having OR gate architecture | Physics | 32 | Expired |
| US5801994A | Non-volatile memory array architecture | Physics | 32 | Expired |
| US5687116A | Programming pulse ramp control circuit | Physics | 27 | Expired |
| US5777926A | Row decoder circuit for PMOS non-volatile memory cell which uses channel hot electrons for programming | Physics | 25 | Expired |
| US7009880B1 | Non-volatile memory architecture to improve read performance | Physics | 19 | Expired |
| US6851014B2 | Memory device having automatic protocol detection | Physics | 16 | Expired |
| US6204721A | Method and apparatus for switching a well potential in response to an output voltage | Electricity | 15 | Expired |
| US5982693A | Sense amplifier with improved bit line initialization | Physics | 12 | Expired |
| US5952851A | Boosted voltage driver | Electricity | 12 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.