Inventor · Cedar Park, TX, US

David Abercrombie

23Patents
9h-index
26Co-inventors
75Inventor score

Filing activity: Aug 26, 1996 → Aug 30, 2019

Most-cited inventions

PatentTitleAreaCited byStatus
US5666063A Method and apparatus for testing an integrated circuit Emerging Cross-Sectional Technologies 111 Expired
US6807655B1 Adaptive off tester screening method based on intrinsic die parametric measurements Electricity 87 Expired
US5937324A Method for forming a line-on-line multi-level metal interconnect structure for use in integrated circuits Electricity 62 Expired
US5798568A Semiconductor component with multi-level interconnect system and method of manufacture Electricity 38 Expired
US7062415B2 Parametric outlier detection Physics 14 Expired
US7454387B2 Method of isolating sources of variance in parametric data Physics 11 Active
US8612919B2 Model-based design verification Physics 9 Active
US7460211B2 Apparatus for wafer patterning to reduce edge exclusion zone Emerging Cross-Sectional Technologies 9 Active
US6980917B2 Optimization of die yield in a silicon wafer “sweet spot” Physics 9 Expired
US7039556B2 Substrate profile analysis Emerging Cross-Sectional Technologies 7 Expired
US7725849B2 Feature failure correlation Emerging Cross-Sectional Technologies 6 Expired
US7174281B2 Method for analyzing manufacturing data Physics 4 Expired
US7390680B2 Method to selectively identify reliability risk die based on characteristics of local regions on the wafer Electricity 1 Expired
US6880140B2 Method to selectively identify reliability risk die based on characteristics of local regions on the wafer Electricity 1 Expired
US9652574B2 Simultaneous multi-layer fill generation Emerging Cross-Sectional Technologies 1 Active
US7137098B2 Pattern component analysis and manipulation Electricity 1 Expired
US7930655B2 Yield profile manipulator Physics 0 Active
US7395522B2 Yield profile manipulator Physics 0 Active
US12032892B2 Semiconductor layout context around a point of interest Physics 0 Active
US7653523B2 Method for calculating high-resolution wafer parameter profiles Electricity 0 Expired
US6658361B1 Heaviest only fail potential Electricity 0 Expired
US9507902B2 Simultaneous multi-layer fill generation General 0 Revoked
US10552565B2 Simultaneous multi-layer fill generation Emerging Cross-Sectional Technologies 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.