Meng-Jaw Cherng
12Patents
9h-index
13Co-inventors
61Inventor score
Filing activity: Sep 30, 1994 → Sep 29, 2000
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5719089A | Method for etching polymer-assisted reduced small contacts for ultra large scale integration semiconductor devices | Emerging Cross-Sectional Technologies | 68 | Expired |
| US5700731A | Method for manufacturing crown-shaped storage capacitors on dynamic random access memory cells | Electricity | 58 | Expired |
| US5712202A | Method for fabricating a multiple walled crown capacitor of a semiconductor device | Emerging Cross-Sectional Technologies | 50 | Expired |
| US6022776A | Method of using silicon oxynitride to improve fabricating of DRAM contacts and landing pads | Electricity | 45 | Expired |
| US5874359A | Small contacts for ultra large scale integration semiconductor devices without separation ground rule | Electricity | 43 | Expired |
| US5543345A | Method for fabricating crown capacitors for a dram cell | Electricity | 26 | Expired |
| US6174781A | Dual damascene process for capacitance fabrication of DRAM | Electricity | 17 | Expired |
| US5491104A | Method for fabricating DRAM cells having fin-type stacked storage capacitors | Electricity | 11 | Expired |
| US6211091A | Self-aligned eetching process | Electricity | 10 | Expired |
| US5943599A | Method of fabricating a passivation layer for integrated circuits | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6150247A | Method for making polycide-to-polycide low contact resistance contacts for interconnections on integrated circuits | Electricity | 3 | Expired |
| US6351037B1 | Method for making polycide-to-polycide low contact resistance contacts for interconnections on integrated circuits | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.