Wing Leung
13Patents
9h-index
20Co-inventors
64Inventor score
Filing activity: May 27, 1998 → Mar 16, 2007
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6275415A | Multiple byte channel hot electron programming using ramped gate and source bias voltage | Physics | 32 | Expired |
| US5901090A | Method for erasing flash electrically erasable programmable read-only memory (EEPROM) | Physics | 19 | Expired |
| US6937518B1 | Programming of a flash memory cell | Physics | 18 | Expired |
| US7283398B1 | Method for minimizing false detection of states in flash memory devices | Physics | 16 | Expired |
| US6285599A | Decoded source lines to tighten erase Vt distribution | Physics | 16 | Expired |
| US7385851B1 | Repetitive erase verify technique for flash memory devices | Physics | 15 | Active |
| US5875130A | Method for programming flash electrically erasable programmable read-only memory | Physics | 13 | Expired |
| US7319615B1 | Ramp gate erase for dual bit flash memory | Physics | 11 | Active |
| US6157572A | Method for erasing flash electrically erasable programmable read-only memory (EEPROM) | Physics | 9 | Expired |
| US7561471B2 | Cycling improvement using higher erase bias | Physics | 4 | Active |
| US7020021B1 | Ramped soft programming for control of erase voltage distributions in flash memory devices | Physics | 3 | Expired |
| US6819615B1 | Memory device having resistive element coupled to reference cell for improved reliability | Physics | 3 | Expired |
| US6781885B1 | Method of programming a memory cell | Physics | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.