Methods for forming low-resistance contacts through integrated process flow systems
US9947578B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 22, 2016 |
| Grant date | Apr 17, 2018 |
| Priority date | — |
| Expiry date | Nov 22, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for forming metal contacts having tungsten liner layers are provided herein. In some embodiments, a method of processing a substrate includes: exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate; transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.