Inventor · Cupertino, CA, US

David Fong

15Patents
11h-index
8Co-inventors
61Inventor score

Filing activity: Apr 26, 2002 → Jul 31, 2012

Most-cited inventions

PatentTitleAreaCited byStatus
US6671040B2 Programming methods and circuits for semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric Electricity 74 Expired
US6777757B2 High density semiconductor memory cell and memory array using a single transistor Physics 73 Expired
US7269047B1 Memory transistor gate oxide stress release and improved reliability Physics 60 Expired
US7064973B2 Combination field programmable gate array allowing dynamic reprogrammability Electricity 45 Expired
US6856540B2 High density semiconductor memory cell and memory array using a single transistor Physics 37 Expired
US6791891B1 Method of testing the thin oxide of a semiconductor memory cell that uses breakdown voltage Physics 33 Expired
US7471541B2 Memory transistor gate oxide stress release and improved reliability Physics 26 Active
US7031209B2 Methods and circuits for testing programmability of a semiconductor memory cell and memory array using a breakdown phenomenon in an ultra-thin dielectric Physics 26 Expired
US8259518B2 Low voltage and low power memory cell based on nano current voltage divider controlled low voltage sense MOSFET Physics 19 Active
US7042772B2 Methods and circuits for programming of a semiconductor memory cell and memory array using a breakdown phenomenon in an ultra-thin dielectric Physics 13 Expired
US7609539B2 Electrically programmable fuse bit Physics 11 Active
US7277348B2 Memory cell comprising an OTP nonvolatile memory unit and a SRAM unit Physics 8 Expired
US7907465B2 Electrically programmable fuse bit Physics 7 Active
US8797820B2 Soft breakdown mode, low voltage, low power antifuse-based non-volatile memory cell Physics 6 Active
US8789267B2 Chip packaging fixture using magnetic field for self-alignment Emerging Cross-Sectional Technologies 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.