Hiroki Yabe
39Patents
5h-index
50Co-inventors
72Inventor score
Filing activity: Mar 19, 1999 → Aug 1, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6998532B2 | Electronic component-built-in module | Emerging Cross-Sectional Technologies | 90 | Expired |
| US7382628B2 | Circuit-component-containing module | Emerging Cross-Sectional Technologies | 7 | Expired |
| US7205483B2 | Flexible substrate having interlaminar junctions, and process for producing the same | Electricity | 6 | Expired |
| US11081167B1 | Sense amplifier architecture for low supply voltage operations | Physics | 6 | Active |
| US7773386B2 | Flexible substrate, multilayer flexible substrate | Emerging Cross-Sectional Technologies | 5 | Active |
| US11087800B1 | Sense amplifier architecture providing small swing voltage sensing | Electricity | 4 | Active |
| US7531754B2 | Flexible substrate having interlaminar junctions, and process for producing the same | Electricity | 4 | Active |
| US10643677B2 | Negative kick on bit line control transistors for faster bit line settling during sensing | Physics | 3 | Active |
| US8999052B2 | Method for producing fine mesoporous silica particles, fine mesoporous silica particles, liquid dispersion of fine mesoporous silica particles, composition containing fine mesoporous silica particles and molded article containing fine mesoporous silica particles | Emerging Cross-Sectional Technologies | 3 | Active |
| US11158384B1 | Apparatus and methods for configurable bit line isolation in non-volatile memory | Electricity | 3 | Active |
| US10984877B1 | Multi BLCS for multi-state verify and multi-level QPW | Physics | 2 | Active |
| US7321496B2 | Flexible substrate, multilayer flexible substrate and process for producing the same | Emerging Cross-Sectional Technologies | 1 | Expired |
| US11004518B2 | Threshold voltage setting with boosting read scheme | Electricity | 1 | Active |
| US6714640B1 | Communication system, exchange and extension call processing method | Electricity | 1 | Expired |
| US10910044B2 | State coding for fractional bits-per-cell memory | Physics | 1 | Active |
| US6892232B2 | Local networking system for registering unregistered terminals | Electricity | 1 | Expired |
| US11250920B2 | Loop-dependent switching between program-verify techniques | Physics | 1 | Active |
| US9472352B2 | Photoelectric conversion element | Emerging Cross-Sectional Technologies | 1 | Active |
| US12260921B2 | Sense amplifier architecture providing reduced program verification time | Physics | 0 | Active |
| US11081192B2 | Memory plane structure for ultra-low read latency applications in non-volatile memories | Physics | 0 | Active |
| US11177277B2 | Word line architecture for three dimensional NAND flash memory | Electricity | 0 | Active |
| US11972807B2 | Charge pump current regulation during voltage ramp | Electricity | 0 | Active |
| US8835916B2 | Organic thin film and organic electroluminescent element containing same in light-emitting layer | Electricity | 0 | Active |
| US9006769B2 | Organic electroluminescence element | Electricity | 0 | Active |
| US10885984B1 | Area effective erase voltage isolation in NAND memory | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.