Michael Fliesler
12Patents
8h-index
33Co-inventors
68Inventor score
Filing activity: Oct 24, 1995 → Jul 24, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6972986B2 | Combination field programmable gate array allowing dynamic reprogrammability and non-votatile programmability based upon transistor gate oxide breakdown | Electricity | 67 | Expired |
| US6940751B2 | High density semiconductor memory cell and memory array using a single transistor and having variable gate oxide breakdown | Physics | 60 | Expired |
| US5642311A | Overerase correction for flash memory which limits overerase and prevents erase verify errors | Physics | 45 | Expired |
| US7173851B1 | 3.5 transistor non-volatile memory cell using gate breakdown phenomena | Physics | 43 | Expired |
| US7031209B2 | Methods and circuits for testing programmability of a semiconductor memory cell and memory array using a breakdown phenomenon in an ultra-thin dielectric | Physics | 26 | Expired |
| US6770938B1 | Diode fabrication for ESD/EOS protection | Electricity | 18 | Expired |
| US7042772B2 | Methods and circuits for programming of a semiconductor memory cell and memory array using a breakdown phenomenon in an ultra-thin dielectric | Physics | 13 | Expired |
| US6238975A | Method for improving electrostatic discharge (ESD) robustness | Electricity | 10 | Expired |
| US6395568B1 | Method and apparatus for achieving bond pad crater sensing and ESD protection integrated circuit products | Electricity | 7 | Expired |
| US8271810B1 | Method and apparatus for dynamically detecting environmental conditions and adjusting drive strength in response to the detecting | Electricity | 3 | Active |
| US6900085B2 | ESD implant following spacer deposition | Electricity | 2 | Expired |
| US6440789B1 | Photoresist spacer process simplification to eliminate the standard polysilicon or oxide spacer process for flash memory circuits | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.