Da Sung
23Patents
5h-index
11Co-inventors
62Inventor score
Filing activity: Mar 6, 2002 → May 5, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6875660B2 | Method of manufacturing high coupling ratio flash memory having sidewall spacer floating gate electrode | Electricity | 15 | Expired |
| US6774428B1 | Flash memory structure and operating method thereof | Physics | 9 | Expired |
| US6914826B2 | Flash memory structure and operating method thereof | Physics | 8 | Expired |
| US6953963B2 | Flash memory cell | Electricity | 8 | Expired |
| US7183606B2 | Flash memory cell and manufacturing method thereof | Electricity | 5 | Expired |
| US6855599B2 | Fabrication method of a flash memory device | Electricity | 5 | Expired |
| US6730959B1 | Structure of flash memory device and fabrication method thereof | Electricity | 4 | Expired |
| US7280591B2 | Integrated reduced media independent interface | Electricity | 4 | Expired |
| US7060560B2 | Method of manufacturing non-volatile memory cell | Electricity | 3 | Expired |
| US6963105B2 | Flash memory cell structure | Electricity | 3 | Expired |
| US6770925B2 | Flush memory having source and drain edges in contact with the stacked gate structure | Electricity | 2 | Expired |
| US7205189B2 | Method of manufacturing a dual bit flash memory | Electricity | 1 | Expired |
| US7436707B2 | Flash memory cell structure and operating method thereof | Electricity | 1 | Active |
| US7180128B2 | Non-volatile memory, non-volatile memory array and manufacturing method thereof | Electricity | 1 | Expired |
| US6778438B2 | Structure, fabrication method and operating method for flash memory | Physics | 1 | Expired |
| US6855598B2 | Flash memory cell including two floating gates and an erasing gate | Electricity | 1 | Expired |
| US6696350B2 | Method of fabricating memory device | Electricity | 1 | Expired |
| US6580412B2 | Signal display apparatus and associated method | Physics | 0 | Expired |
| US9496418B2 | Non-volatile memory and fabricating method thereof | Electricity | 0 | Active |
| US7029973B2 | Method of fabricating a flash memory cell | Electricity | 0 | Expired |
| US6834011B2 | Structure, fabrication method and operating method for flash memory | Physics | 0 | Expired |
| US7485529B2 | Method of fabricating non-volatile memory | Electricity | 0 | Active |
| US7514311B2 | Method of manufacturing a SONOS memory | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.