Inventor · Cupertino, CA, US

Danut Manea

20Patents
6h-index
14Co-inventors
66Inventor score

Filing activity: Jun 18, 2002 → Sep 15, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US6714448B2 Method of programming a multi-level memory device Physics 33 Expired
US6621745B1 Row decoder circuit for use in programming a memory device Physics 23 Expired
US6724662B2 Method of recovering overerased bits in a memory device Physics 17 Expired
US6618297B1 Method of establishing reference levels for sensing multilevel memory cell states Physics 14 Expired
US9037890B2 Ultra-deep power-down mode for memory devices Emerging Cross-Sectional Technologies 13 Active
US9013231B1 Voltage reference with low sensitivity to package shift Physics 8 Active
US7929356B2 Method and system to access memory Emerging Cross-Sectional Technologies 6 Active
US7242242B2 Fast dynamic low-voltage current mirror with compensated error Physics 4 Expired
US9490999B2 Single-wire communications using iterative baud learning Emerging Cross-Sectional Technologies 2 Active
US9483108B2 Ultra-deep power-down mode for memory devices Emerging Cross-Sectional Technologies 2 Active
US7236050B2 Fast dynamic low-voltage current mirror with compensated error Physics 1 Expired
US8208315B2 Method and system to access memory Emerging Cross-Sectional Technologies 1 Active
US7084699B2 Fast dynamic low-voltage current mirror with compensated error Physics 1 Expired
US9501078B2 Voltage reference with low sensitivty to package shift Physics 1 Active
US9882738B2 Single-wire communications using iterative baud learning Emerging Cross-Sectional Technologies 0 Active
US10200017B2 Self-setting/resetting latch Electricity 0 Active
US8885413B2 Adaptive programming for non-volatile memory devices Physics 0 Active
US11024373B2 Voltage-mode bit line precharge for random-access memory cells Physics 0 Active
US11967374B2 Voltage-mode bit line precharge for random-access memory cells Physics 0 Active
US11482281B2 Voltage-mode bit line precharge for random-access memory cells Physics 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.