Nitin Chawla
33Patents
4h-index
22Co-inventors
59Inventor score
Filing activity: Aug 29, 2005 → Oct 17, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8154335B2 | Fail safe adaptive voltage/frequency system | Emerging Cross-Sectional Technologies | 9 | Active |
| US8037336B2 | Spread spectrum clock generation | Electricity | 7 | Active |
| US7698355B2 | Minimal area integrated circuit implementation of a polyphase interpolation filter using coefficients symmetry | Electricity | 6 | Active |
| US8269545B2 | Fail safe adaptive voltage/frequency system | Emerging Cross-Sectional Technologies | 4 | Active |
| US7917569B2 | Device for implementing a sum of products expression | Physics | 3 | Active |
| US11094376B2 | In-memory compute array with integrated bias elements | Electricity | 2 | Active |
| US9021324B2 | Calibration arrangement | Emerging Cross-Sectional Technologies | 2 | Active |
| US11474788B2 | Elements for in-memory compute | Physics | 2 | Active |
| US8552765B2 | Adaptive multi-stage slack borrowing for high performance error resilient computing | Electricity | 2 | Active |
| US11984151B2 | Adaptive bit line overdrive control for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM) | Physics | 1 | Active |
| US12087356B2 | Serial word line actuation with linked source voltage supply modulation for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM) | Physics | 1 | Active |
| US11605424B2 | In-memory compute array with integrated bias elements | Electricity | 1 | Active |
| US12354644B2 | Adaptive word line underdrive control for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM) | Physics | 0 | Active |
| US11749343B2 | Memory management device, system and method | Physics | 0 | Active |
| US8994416B2 | Adaptive multi-stage slack borrowing for high performance error resilient computing | Electricity | 0 | Active |
| US12183424B2 | Bit-cell architecture based in-memory compute | Physics | 0 | Active |
| US12176025B2 | Adaptive body bias management for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM) | Physics | 0 | Active |
| US12406705B2 | In-memory computation circuit using static random access memory (SRAM) array segmentation | Physics | 0 | Active |
| US11726543B2 | Computing system power management device, system and method | Physics | 0 | Active |
| US11360667B2 | Tagged memory operated at lower vmin in error tolerant system | Emerging Cross-Sectional Technologies | 0 | Active |
| US12386506B2 | Tagged memory operated at lower VMIN in error tolerant system | Emerging Cross-Sectional Technologies | 0 | Active |
| US11257543B2 | Memory management device, system and method | Physics | 0 | Active |
| US12292780B2 | Computing system power management device, system and method | Physics | 0 | Active |
| US12243584B2 | In-memory compute array with integrated bias elements | Electricity | 0 | Active |
| US12353341B2 | Tuning of read/write cycle time delay for a memory circuit dependent on operational mode selection | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.