Method for single fin cuts using selective ion implants
US9287130B1 · kind B1 · utility
3Cited by
2References
23Claims
0Family size
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Key dates
| Filing date | Apr 1, 2015 |
| Grant date | Mar 15, 2016 |
| Priority date | — |
| Expiry date | Apr 1, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes forming a plurality of fin elements above a substrate. A mask is formed above the substrate. The mask has an opening defined above at least one selected fin element of the plurality of fin elements. An ion species is implanted into the at least one selected fin element through the opening to increase its etch characteristics relative to the other fin elements. The at least one selected fin element is removed selectively relative to the other fin elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.