Patent assignee · US · COMPANY

APLUS FLASH TECHNOLOGY, INC.

109Patents
51Active
109Granted
48Portfolio score

Filing activity: Mar 18, 1997 → Dec 27, 2015 · 17 expiring within 5 years

Most-cited patents

PatentTitleAreaCited byStatus
US7164608B2 NVRAM memory cell architecture that integrates conventional SRAM and flash cells Physics 346 Expired
US5953255A Low voltage, low current hot-hole injection erase and hot-electron programmable flash memory with enhanced endurance Physics 126 Expired
US5978283A Charge pump circuits Electricity 117 Expired
US6381670B1 Flash memory array having maximum and minimum threshold voltage detection for eliminating over-erasure problem and enhancing write operation Physics 103 Expired
US6714457B1 Parallel channel programming scheme for MLC flash memory Physics 88 Expired
US6031765A Reversed split-gate cell array Physics 74 Expired
US5835420A Node-precise voltage regulation for a MOS memory system Physics 63 Expired
US6620682B1 Set of three level concurrent word line bias conditions for a nor type flash memory array Electricity 61 Expired
US6556481B1 3-step write operation nonvolatile semiconductor one-transistor, nor-type flash EEPROM memory cell Physics 60 Expired
US6862223B1 MONOLITHIC, COMBO NONVOLATILE MEMORY ALLOWING BYTE, PAGE AND BLOCK WRITE WITH NO DISTURB AND DIVIDED-WELL IN THE CELL ARRAY USING A UNIFIED CELL STRUCTURE AND TECHNOLOGY WITH A NEW SCHEME OF DECODER AND LAYOUT Physics 59 Expired
US8120959B2 NAND string based NAND/NOR flash memory cell, array, and memory device having parallel bit lines and source lines, having a programmable select gating transistor, and circuits and methods for operating same Physics 55 Active
US6023188A Positive/negative high voltage charge pump system Electricity 50 Expired
US6498752B1 Three step write process used for a nonvolatile NOR type EEPROM memory Physics 46 Expired
US7369438B2 Combo memory design and technology for multiple-function java card, sim-card, bio-passport and bio-id card applications Electricity 46 Expired
US6757196B1 Two transistor flash memory cell for use in EEPROM arrays with a programmable logic device Electricity 43 Expired
US6009022A Node-precise voltage regulation for a MOS memory system Physics 43 Expired
US5920503A Flash memory with novel bitline decoder and sourceline latch Physics 40 Expired
US6850438B2 Combination nonvolatile memory using unified technology with byte, page and block write and simultaneous read and write operations Physics 40 Expired
US9171627B2 Non-boosting program inhibit scheme in NAND design Physics 38 Active
US5978277A Bias condition and X-decoder circuit of flash memory array Physics 38 Expired
US5917757A Flash memory with high speed erasing structure using thin oxide semiconductor devices Physics 36 Expired
US6788612B2 Flash memory array structure suitable for multiple simultaneous operations Physics 32 Expired
US8773903B2 High speed high density nand-based 2T-NOR flash memory design Electricity 32 Active
US6240027A Approach to provide high external voltage for flash memory erase Physics 31 Expired
US6660585B1 Stacked gate flash memory cell with reduced disturb conditions Physics 26 Expired

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.