Kilopass Technologies, Inc.
17Patents
1Active
17Granted
36Portfolio score
Filing activity: Sep 18, 2001 → Jun 2, 2010 · 1 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6992925B2 | High density semiconductor memory cell and memory array using a single transistor and having counter-doped poly and buried diffusion wordline | Physics | 239 | Expired |
| US6667902B2 | Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric | Electricity | 123 | Expired |
| US6671040B2 | Programming methods and circuits for semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric | Electricity | 74 | Expired |
| US6777757B2 | High density semiconductor memory cell and memory array using a single transistor | Physics | 73 | Expired |
| US6700151B2 | Reprogrammable non-volatile memory using a breakdown phenomena in an ultra-thin dielectric | Electricity | 68 | Expired |
| US6972986B2 | Combination field programmable gate array allowing dynamic reprogrammability and non-votatile programmability based upon transistor gate oxide breakdown | Electricity | 67 | Expired |
| US6940751B2 | High density semiconductor memory cell and memory array using a single transistor and having variable gate oxide breakdown | Physics | 60 | Expired |
| US6650143B1 | Field programmable gate array based upon transistor gate oxide breakdown | Electricity | 55 | Expired |
| US6822888B2 | Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric | Electricity | 51 | Expired |
| US6898116B2 | High density semiconductor memory cell and memory array using a single transistor having a buried N+ connection | Physics | 48 | Expired |
| US6798693B2 | Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric | Electricity | 46 | Expired |
| US6856540B2 | High density semiconductor memory cell and memory array using a single transistor | Physics | 37 | Expired |
| US6956258B2 | Reprogrammable non-volatile memory using a breakdown phenomena in an ultra-thin dielectric | Electricity | 35 | Expired |
| US6791891B1 | Method of testing the thin oxide of a semiconductor memory cell that uses breakdown voltage | Physics | 33 | Expired |
| US6766960B2 | Smart card having memory using a breakdown phenomena in an ultra-thin dielectric | Electricity | 25 | Expired |
| US6924664B2 | Field programmable gate array | Electricity | 5 | Expired |
| US8283731B2 | One-time programmable memory | Electricity | 3 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.