Efrem Bolandrina
34Patents
5h-index
17Co-inventors
66Inventor score
Filing activity: Jun 4, 2004 → Mar 29, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7554861B2 | Memory device with a ramp-like voltage biasing structure and reduced number of reference cells | Physics | 45 | Active |
| US7345905B2 | Memory device with time-shifting based emulation of reference cells | Physics | 37 | Active |
| US7272059B2 | Sensing circuit for a semiconductor memory | Physics | 13 | Expired |
| US10692557B1 | Reference voltage management | Physics | 5 | Active |
| US9025392B1 | Memory device with reduced neighbor memory cell disturbance | Physics | 5 | Active |
| US9418735B2 | Memory device with reduced neighbor memory cell disturbance | Physics | 3 | Active |
| US7965561B2 | Row selector occupying a reduced device area for semiconductor memory devices | Physics | 3 | Active |
| US10762944B2 | Single plate configuration and memory array operation | Physics | 2 | Active |
| US8730754B2 | Memory apparatus and system with shared wordline decoder | Physics | 2 | Active |
| US10083744B2 | Memory device with reduced neighbor memory cell disturbance | Physics | 2 | Active |
| US11626151B2 | Single plate configuration and memory array operation | Physics | 2 | Active |
| US9767898B2 | Memory device with reduced neighbor memory cell disturbance | Physics | 2 | Active |
| US7006025B2 | Method for generating a reference current for sense amplifiers and corresponding generator | Physics | 1 | Expired |
| US8159899B2 | Wordline driver for memory | Physics | 1 | Active |
| US11967372B2 | Shared decoder architecture for three-dimensional memory arrays | Physics | 1 | Active |
| US11545219B2 | Memory device with single transistor drivers and methods to operate the memory device | Physics | 1 | Active |
| US11915740B2 | Parallel access in a memory array | Physics | 1 | Active |
| US10916288B1 | Sensing techniques for a memory cell | Physics | 1 | Active |
| US12183421B2 | Techniques for indicating row activation | Physics | 0 | Active |
| US11289147B2 | Sensing techniques for a memory cell | Physics | 0 | Active |
| US11682439B2 | Parallel access for memory subarrays | Physics | 0 | Active |
| US12249362B2 | Single plate configuration and memory array operation | Physics | 0 | Active |
| US12260907B2 | Shared decoder architecture for three-dimensional memory arrays | Physics | 0 | Active |
| US11217293B2 | Reference voltage management | Physics | 0 | Active |
| US11877457B2 | Vertical 3D memory device and accessing method | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.