Yang-Ki Kim
21Patents
6h-index
27Co-inventors
65Inventor score
Filing activity: Dec 23, 2004 → Jun 22, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8358546B2 | Semiconductor device having additive latency | Physics | 34 | Active |
| US7680284B2 | Apparatus and method for controlling operation of audio low sound output means | Physics | 21 | Active |
| US8386737B2 | Memory devices and systems including write leveling operations and methods of performing write leveling operations in memory devices and systems | Emerging Cross-Sectional Technologies | 18 | Active |
| US7969182B2 | Semiconductor devices having ZQ calibration circuits and calibration methods thereof | Physics | 13 | Active |
| US8508251B2 | Semiconductor devices having on-die termination structures for reducing current consumption and termination methods performed in the semiconductor devices | Electricity | 9 | Active |
| US8049545B2 | Delay-locked loop circuit controlled by column strobe write latency | Electricity | 6 | Active |
| US7525359B2 | Duty cycle correction amplification circuit | Electricity | 6 | Active |
| US8035412B2 | On-die termination latency clock control circuit and method of controlling the on-die termination latency clock | Physics | 5 | Active |
| US8373475B2 | Phase interpolator and delay locked-loop circuit | Electricity | 5 | Active |
| US7518411B2 | Data receiving apparatus using semi-dual reference voltage | Electricity | 4 | Active |
| US7471105B2 | Level shifter and level shifting method for higher speed and lower power | Electricity | 4 | Active |
| US9281048B2 | Semiconductor memory device capable of preventing negative bias temperature instability (NBTI) using self refresh information | Physics | 4 | Active |
| US8742780B2 | Semiconductor devices including design for test capabilities and semiconductor modules and test systems including such devices | Electricity | 3 | Active |
| US8559241B2 | Data receiver, semiconductor device and memory device including the same | Physics | 2 | Active |
| US8203860B2 | Semiconductor memory device having driver for compensating for parasitic resistance of data input-output pads | Emerging Cross-Sectional Technologies | 1 | Active |
| US11164609B2 | Integrated circuit devices having strobe signal transmitters with enhanced drive characteristics | Physics | 1 | Active |
| US10726883B2 | Integrated circuit devices having strobe signal transmitters with enhanced drive characteristics | Physics | 0 | Active |
| US10520470B2 | Temperature compensation method for gas sensor module using change of heater current | Physics | 0 | Active |
| US10605764B2 | Solid electrolyte carbon dioxide sensor and manufacturing method thereof | Performing Operations; Transporting | 0 | Active |
| US9245605B2 | Clock synchronization circuit and semiconductor memory device including clock synchronization circuit | Electricity | 0 | Active |
| US10591437B2 | Solid electrolyte-type carbon dioxide sensor having reduced influence from volatile organic compounds | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.