Dennis E. Dudeck
23Patents
4h-index
12Co-inventors
56Inventor score
Filing activity: Dec 23, 2003 → Jun 13, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7177212B2 | Method and apparatus for reducing leakage current in a read only memory device using shortened precharge phase | Physics | 9 | Expired |
| US7898887B2 | Sense amplifier with redundancy | Physics | 7 | Active |
| US7042779B2 | Method and apparatus for reducing leakage current in a read only memory device using pre-charged sub-arrays | Physics | 5 | Expired |
| US7848172B2 | Memory circuit having reduced power consumption | Physics | 5 | Active |
| US8468419B2 | High-reliability memory | Electricity | 4 | Active |
| US8125842B2 | Tracking circuit for reducing faults in a memory | Physics | 3 | Active |
| US7826301B2 | Word line driver circuit with reduced leakage | Physics | 3 | Active |
| US7391633B2 | Accelerated searching for content-addressable memory | Physics | 3 | Active |
| US7755948B2 | Process and temperature tolerant non-volatile memory | Physics | 2 | Active |
| US7301828B2 | Decoding techniques for read-only memory | Electricity | 2 | Expired |
| US9711220B2 | Duo content addressable memory (CAM) using a single CAM | Physics | 1 | Active |
| US8059472B2 | Process and temperature tolerant non-volatile memory | Physics | 1 | Active |
| US8462562B1 | Memory device with area efficient power gating circuitry | Physics | 1 | Active |
| US7191280B2 | Content addressable memories (CAMs) based on a binary CAM and having at least three states | Physics | 1 | Expired |
| US10032516B2 | Duo content addressable memory (CAM) using a single CAM | Physics | 1 | Active |
| US7324364B2 | Layout techniques for memory circuitry | Electricity | 1 | Expired |
| US7085149B2 | Method and apparatus for reducing leakage current in a read only memory device using transistor bias | Physics | 1 | Expired |
| US7460424B2 | Method and apparatus for reducing leakage current in a read only memory device using shortened precharge phase | Physics | 0 | Active |
| US7558095B2 | Memory cell for content-addressable memory | Emerging Cross-Sectional Technologies | 0 | Active |
| US7933155B2 | Memory device with reduced buffer current during power-down mode | Physics | 0 | Active |
| US8365044B2 | Memory device with error correction based on automatic logic inversion | Physics | 0 | Active |
| US7363424B2 | Content addressable memories (CAMs) based on a binary CAM and having at least three states | Physics | 0 | Active |
| US7433254B2 | Accelerated single-ended sensing for a memory circuit | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.