Magepower Semiconductor Corp.
14Patents
0Active
14Granted
31Portfolio score
Filing activity: Feb 20, 1996 → Sep 5, 2000
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6426260B1 | Switching speed improvement in DMO by implanting lightly doped region under gate | Electricity | 139 | Expired |
| US6005271A | Semiconductor cell array with high packing density | Electricity | 113 | Expired |
| US5907776A | Method of forming a semiconductor structure having reduced threshold voltage and high punch-through tolerance | Electricity | 87 | Expired |
| US6262453A | Double gate-oxide for reducing gate-drain capacitance in trenched DMOS with high-dopant concentration buried-region under trenched gate | Electricity | 81 | Expired |
| US6031265A | Enhancing DMOS device ruggedness by reducing transistor parasitic resistance and by inducing breakdown near gate runners and termination area | Electricity | 75 | Expired |
| US6051468A | Method of forming a semiconductor structure with uniform threshold voltage and punch-through tolerance | Electricity | 69 | Expired |
| US6172398A | Trenched DMOS device provided with body-dopant redistribution-compensation region for preventing punch through and adjusting threshold voltage | Electricity | 52 | Expired |
| US6049104A | MOSFET device to reduce gate-width without increasing JFET resistance | Emerging Cross-Sectional Technologies | 28 | Expired |
| US5973361A | DMOS transistors with diffusion merged body regions manufactured with reduced number of masks and enhanced ruggedness | Electricity | 26 | Expired |
| US5844277A | Power MOSFETs and cell topology | Electricity | 19 | Expired |
| US5894150A | Cell density improvement in planar DMOS with farther-spaced body regions and novel gates | Electricity | 18 | Expired |
| US6048759A | Gate/drain capacitance reduction for double gate-oxide DMOS without degrading avalanche breakdown | Electricity | 17 | Expired |
| US6404025B1 | MOSFET power device manufactured with reduced number of masks by fabrication simplified processes | Electricity | 15 | Expired |
| US5998266A | Method of forming a semiconductor structure having laterally merged body layer | Electricity | 11 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.