Chiaming Chai
28Patents
6h-index
20Co-inventors
69Inventor score
Filing activity: Sep 25, 2000 → May 27, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6385071B1 | Redundant scheme for CAMRAM memory array | Physics | 42 | Expired |
| US6452822B1 | Segmented match line arrangement for content addressable memory | Physics | 20 | Expired |
| US6658610B1 | Compilable address magnitude comparator for memory array self-testing | Physics | 14 | Expired |
| US8008961B2 | Adaptive clock generators, systems, and methods | Electricity | 12 | Active |
| US7073112B2 | Compilable address magnitude comparator for memory array self-testing | Physics | 10 | Expired |
| US8638153B2 | Pulse clock generation logic with built-in level shifter and programmable rising edge and pulse width | Physics | 8 | Active |
| US6816396B2 | Apparatus for detecting multiple hits in a CAMRAM memory array | Physics | 6 | Expired |
| US7761774B2 | High speed CAM lookup using stored encoded key | Physics | 4 | Active |
| US8456929B2 | Circuits, systems, and methods for dynamic voltage level shifting | Electricity | 4 | Active |
| US7242600B2 | Circuit and method for subdividing a CAMRAM bank by controlling a virtual ground | Physics | 4 | Expired |
| US7616468B2 | Method and apparatus for reducing power consumption in a content addressable memory | Physics | 3 | Active |
| US7586772B2 | Method and apparatus for aborting content addressable memory search operations | Physics | 3 | Active |
| US7961499B2 | Low leakage high performance static random access memory cell using dual-technology transistors | Physics | 3 | Active |
| US7564266B2 | Logic state catching circuits | Electricity | 3 | Active |
| US7876631B2 | Self-tuning of signal path delay in circuit employing multiple voltage domains | Physics | 2 | Active |
| US9007817B2 | Pre-charging bitlines in a static random access memory (SRAM) prior to data access for reducing leakage power, and related systems and methods | Physics | 2 | Active |
| US7952901B2 | Content addressable memory | Electricity | 2 | Active |
| US9911472B1 | Write bitline driver for a dual voltage domain | Physics | 2 | Active |
| US9548089B2 | Pipelining an asynchronous memory reusing a sense amp and an output latch | Physics | 1 | Active |
| US9190141B2 | Circuits for voltage or current biasing static random access memory (SRAM) bitcells during SRAM reset operations, and related systems and methods | Physics | 1 | Active |
| US9442675B2 | Redirecting data from a defective data entry in memory to a redundant data entry prior to data access, and related systems and methods | Physics | 0 | Active |
| US6556466B2 | Method and structure for a CAMRAM cache memory | Physics | 0 | Expired |
| US8154900B2 | Method and apparatus for reducing power consumption in a content addressable memory | Physics | 0 | Active |
| US8576612B2 | Low leakage high performance static random access memory cell using dual-technology transistors | Physics | 0 | Active |
| US11527274B1 | Memory array circuits including word line circuits for improved word line signal timing and related methods | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.