Inventor · Zhubei City, TW

Jeng-Wei Yang

28Patents
8h-index
17Co-inventors
68Inventor score

Filing activity: Sep 29, 2005 → Feb 18, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US9887206B2 Method of making split gate non-volatile memory cell with 3D FinFET structure Electricity 53 Active
US9276006B1 Split gate non-volatile flash memory cell having metal-enhanced gates and method of making same Electricity 34 Active
US9634019B1 Non-volatile split gate memory cells with integrated high K metal gate, and method of making same Electricity 11 Active
US9634018B2 Split gate non-volatile memory cell with 3D finFET structure, and method of making same Electricity 11 Active
US9379121B1 Split gate non-volatile flash memory cell having metal gates and method of making same Electricity 10 Active
US9496369B2 Method of forming split-gate memory cell array along with low and high voltage logic devices Electricity 9 Active
US9972630B2 Split gate non-volatile flash memory cell having metal gates and method of making same Electricity 8 Active
US9985042B2 Method of integrating FinFET CMOS devices with embedded nonvolatile memory cells Electricity 8 Active
US9431407B2 Method of making embedded memory device with silicon-on-insulator substrate Electricity 7 Active
US10418451B1 Split-gate flash memory cell with varying insulation gate oxides, and method of forming same Electricity 7 Active
US9721958B2 Method of forming self-aligned split-gate memory cell array with metal gates and logic devices Electricity 5 Active
US9793281B2 Non-volatile split gate memory cells with integrated high K metal gate logic device and metal-free erase gate, and method of making same Electricity 5 Active
US9484261B2 Formation of self-aligned source for split-gate non-volatile memory cell Electricity 4 Active
US10714634B2 Non-volatile split gate memory cells with integrated high K metal control gates and method of making same Electricity 4 Active
US10608090B2 Method of manufacturing a split-gate flash memory cell with erase gate Electricity 4 Active
US10249631B2 Split gate non-volatile flash memory cell having metal gates Electricity 3 Active
US10312246B2 Split-gate flash memory cell with improved scaling using enhanced lateral control gate to floating gate coupling Electricity 2 Active
US9793280B2 Integration of split gate flash memory array and logic devices Physics 2 Active
US9972493B2 Method of forming low height split gate memory cells Electricity 2 Active
US7358559B2 Bi-directional read/program non-volatile floating gate memory array, and method of formation Electricity 2 Expired
US9293358B2 Double patterning method of forming semiconductor active areas and isolation regions Electricity 2 Active
US9793279B2 Split gate non-volatile memory cell having a floating gate, word line, erase gate, and method of manufacturing Electricity 1 Active
US10607703B2 Split-gate flash memory array with byte erase operation Electricity 1 Active
US10141321B2 Method of forming flash memory with separate wordline and erase gates Physics 1 Active
US9659946B2 Self-aligned source for split-gate non-volatile memory cell Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.