Yield Microelectronics Corp.
24Patents
23Active
24Granted
49Portfolio score
Filing activity: Jun 7, 2004 → Oct 4, 2023 · 6 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7099192B2 | Nonvolatile flash memory and method of operating the same | Physics | 45 | Expired |
| US7423903B2 | Single-gate non-volatile memory and operation method thereof | Electricity | 28 | Active |
| US8218369B2 | Non-volatile memory low voltage and high speed erasure method | Physics | 7 | Active |
| US8305808B2 | Low-voltage EEPROM array | Electricity | 6 | Active |
| US9240242B1 | Method for operating low-cost EEPROM array | Physics | 3 | Active |
| US9318208B1 | Method for operating small-area EEPROM array | Physics | 3 | Active |
| US11424252B2 | Small-area and low-voltage anti-fuse element and array | Electricity | 1 | Active |
| US10141057B1 | Erasing method of single-gate non-volatile memory | Electricity | 1 | Active |
| US8300469B2 | Cost saving electrically-erasable-programmable read-only memory (EEPROM) array | Physics | 1 | Active |
| US7508253B1 | Charge pump device and operating method thereof | Electricity | 1 | Active |
| US10854297B1 | Operating method of a low current electrically erasable programmable read only memory (EEPROM) array | Electricity | 1 | Active |
| US8300461B2 | Area saving electrically-erasable-programmable read-only memory (EEPROM) array | Physics | 1 | Active |
| US11742039B2 | Small-area side-capacitor read-only memory device, memory array and method for operating the same | Emerging Cross-Sectional Technologies | 0 | Active |
| US9601202B2 | Low voltage difference operated EEPROM and operating method thereof | Electricity | 0 | Active |
| US12250810B2 | Small-area high-efficiency read-only memory (ROM) array and method for operating the same | Electricity | 0 | Active |
| US12328871B2 | High writing rate antifuse array | Emerging Cross-Sectional Technologies | 0 | Active |
| US11502090B2 | Low-cost and low-voltage anti-fuse array | Electricity | 0 | Active |
| US10242741B1 | Low voltage difference operated EEPROM and operating method thereof | Electricity | 0 | Active |
| US9281312B2 | Non-volatile memory with a single gate-source common terminal and operation method thereof | Electricity | 0 | Active |
| US10643708B1 | Method for operating low-current EEPROM array | Electricity | 0 | Active |
| US10685716B1 | Method of fast erasing low-current EEPROM array | Electricity | 0 | Active |
| US12327597B2 | Small-area common-voltage anti-fuse array | Electricity | 0 | Active |
| US11004857B1 | Operating method of an electrically erasable programmable read only memory (EEPROM) cell | Electricity | 0 | Active |
| US11380694B2 | Low-voltage anti-fuse element | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.