Chun Shiah
52Patents
7h-index
32Co-inventors
72Inventor score
Filing activity: Jun 10, 1996 → Apr 10, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7054178B1 | Datapath architecture for high area efficiency | Physics | 418 | Expired |
| US6130853A | Address decoding scheme for DDR memory | Physics | 25 | Expired |
| US6101138A | Area efficient global row redundancy scheme for DRAM | Physics | 13 | Expired |
| US5723994A | Level boost restoration circuit | Electricity | 8 | Expired |
| US7843222B1 | Buffer-driving circuit capable of increasing responding speed and prolonging lifespan, buffer, and method thereof | Electricity | 7 | Active |
| US6861877B2 | Circuit to independently adjust rise and fall edge timing of a signal | Electricity | 7 | Expired |
| US6894917B2 | DRAM refresh scheme with flexible frequency for active and standby mode | Physics | 7 | Expired |
| US5815463A | Flexible time write operation | Physics | 6 | Expired |
| US7969253B2 | VCO with stabilized reference current source module | Electricity | 5 | Active |
| US7414448B2 | Duty cycle correction circuit | Electricity | 4 | Active |
| US7515669B2 | Dynamic input setup/hold time improvement architecture | Electricity | 3 | Active |
| US7738306B2 | Method to improve the write speed for memory products | Physics | 3 | Active |
| US7362144B2 | Low jitter input buffer with small input signal swing | Electricity | 3 | Expired |
| US7466013B2 | Semiconductor die structure featuring a triple pad organization | Electricity | 2 | Active |
| US8144526B2 | Method to improve the write speed for memory products | Physics | 2 | Active |
| US8723570B2 | Delay-locked loop and method for a delay-locked loop generating an application clock | Electricity | 2 | Active |
| US10387047B2 | Memory circuit with improved read and write access | Physics | 2 | Active |
| US7880517B2 | Delayed-locked loop with power-saving function | Electricity | 2 | Active |
| US8432206B2 | Delay lock loop system with a self-tracking function and method thereof | Electricity | 2 | Active |
| US7609579B2 | Memory module with failed memory cell repair function and method thereof | Physics | 2 | Active |
| US7940093B2 | Output circuit with overshoot-reducing function | Electricity | 2 | Active |
| US7755406B2 | Duty cycle correction circuit with wide-frequency working range | Electricity | 2 | Active |
| US9214448B2 | Bundled memory and manufacture method for a bundled memory with an external input/output bus | Electricity | 2 | Active |
| US8872540B2 | Method of sharing in use an impedance matching circuit of a memory circuit to perform an initial calibration and a full time refresh mode calibration, and memory circuit with an impedance matching circuit capable of being used in an initial calibration and a full time refresh mode calibration | Physics | 1 | Active |
| US8755236B2 | Latch system applied to a plurality of banks of a memory circuit | Physics | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.