Inventor · Plano, TX, US

Xiaowei Deng

54Patents
12h-index
23Co-inventors
84Inventor score

Filing activity: Jul 13, 2000 → Mar 31, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US6925025B2 SRAM device and a method of powering-down the same Physics 59 Expired
US7164596B1 SRAM cell with column select line Physics 41 Expired
US7816740B2 Memory cell layout structure with outer bitline Electricity 34 Active
US7027346B2 Bit line control for low power in standby Physics 33 Expired
US6573549B1 Dynamic threshold voltage 6T SRAM cell Electricity 31 Expired
US7061820B2 Voltage keeping scheme for low-leakage memory devices Physics 23 Expired
US7039818B2 Low leakage SRAM scheme Physics 18 Expired
US6362660B1 CMOS latch and register circuitry using quantum mechanical tunneling structures Electricity 14 Expired
US6731533B2 Loadless 4T SRAM cell with PMOS drivers Physics 14 Expired
US8654575B2 Disturb-free static random access memory cell Physics 13 Active
US6870375B2 System and method for measuring a capacitance associated with an integrated circuit Physics 13 Expired
US8498143B2 Solid-state memory cell with improved read stability Physics 12 Active
US6922370B2 High performance SRAM device and method of powering-down the same Physics 12 Expired
US8462542B2 Bit-by-bit write assist for solid-state memory Physics 10 Active
US8305798B2 Memory cell with equalization write assist in solid-state memory Physics 8 Active
US6539526B1 Method and apparatus for determining capacitances for a device within an integrated circuit Physics 8 Expired
US8760927B2 Efficient static random-access memory layout Electricity 8 Active
US7936623B2 Universal structure for memory cell characterization Emerging Cross-Sectional Technologies 7 Active
US8228749B2 Margin testing of static random access memory cells Physics 6 Active
US8379467B2 Structure and methods for measuring margins in an SRAM bit Physics 5 Active
US7924640B2 Method for memory cell characterization using universal structure Physics 5 Active
US8716808B2 Static random-access memory cell array with deep well regions Electricity 5 Active
US8437213B2 Characterization of bits in a functional memory Physics 4 Active
US8064279B2 Structure and method for screening SRAMS Physics 4 Active
US8654562B2 Static random access memory cell with single-sided buffer and asymmetric construction Electricity 3 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.